“Researchers have demonstrated the high-performance potential of an experimental transistor made of a semiconductor called beta gallium oxide, which could bring new ultra-efficient switches for applications such as the power grid, military ships and aircraft. The semiconductor is promising for next-generation “power electronics,” or devices needed to control the flow of electrical energy in circuits. Such a technology could help to reduce global energy use and greenhouse gas emissions by replacing less efficient and bulky power electronics switches now in use. The transistor, called a gallium oxide on insulator field effect transistor, or GOOI, is especially promising because it possesses an “ultra-wide bandgap,” a trait needed for switches in high-voltage applications. Compared to other semiconductors thought to be promising for the transistors, devices made from beta gallium oxide have a higher “breakdown voltage,” or the voltage at which the device fails, said Peide Ye, Purdue University’s Richard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering.”